BSS131 |
RFQ for BSS131 |
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| Technical/Catalog Information | BSS131E6327 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 240V |
| Current - Continuous Drain (Id) @ 25° C | 110mA |
| Rds On (Max) @ Id, Vgs | 14 Ohm @ 100mA, 10V |
| Input Capacitance (Ciss) @ Vds | 77pF @ 25V |
| Power - Max | 360mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 3.1nC @ 10V |
| Package / Case | SOT-23 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSS131E6327 BSS131E6327 BSS131INCT ND BSS131INCTND BSS131INCT |
| Product | Manufacturers | Pack | D/C |
| BSS131 | - | SOT-23 | 05+ |
Features |
| • N-Channel• Enhancement mode• Logic level• dv /dt rated |
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
|
Continuous drain current |
ID |
TA = 25 °C |
0.11
0.09 |
A |
|
Pulsed drain current |
I D puls |
TA = 25 °C |
0.4 |
|
|
Reverse diode dv /dt |
dv /dt |
I D=0.1 A, VDS=192 V, |
6 |
kV/s |
|
Gate source voltage |
VGS |
|
±20 |
V |
|
ESD sensitivity (HBM) as per MIL-STD 883 |
|
|
Class 1 |
W |